| 摘要 |
PURPOSE:To obtain an edge emitting diode small in output fluctuation caused by temperature change by a method wherein the length of a light emitting region is set 10 times or below of the width. CONSTITUTION:An N-InP clad layer 2, an InGaAsP active layer 3, a P-InP clad layer 4, and a P-InGaAsP contact layer 5 are successively grown in crystal on an N-InP substrate 1, and Zn is diffused into all the surface of the contact layer 5 to form a contact layer 6, a mesa 7 is formed in the <011> direction of a crystal axis, and an etching process is carried out as deep as the intermediate point of the clad layer 2. At this point, a gentle slope vertical to the <011> direction is formed, light rays propagated backward from the active layer 3 are reflected downward at the slope concerned. After a mask is removed, an insulating film of SiO2 or SiNx is formed on the upside, the insulating film formed on a current injection region of the mesa is removed, a P electrode is provided onto the upside, and an N electrode is provided to the underside. In result, an end face light emitting diode excellent in temperature characteristics can be obtained. |
