| 摘要 |
<p>PURPOSE:To enable the transmittivity to be adjusted with high precision by a method wherein the film thickness of an X-ray transmission sustaining film is specified so as to maximize the ripple of the film thickness interference at the specific wavelength for enabling the film thickness to be set up by simulation when an X-ray transmissive thin film is formed furthermore, the film thickness of said sustaining film is adjusted by dry-etching process after said film is formed into a membrance. CONSTITUTION:The title mask for X-ray exposure is capable of controlling the film thickness of the whole region or a part thereof of an X-ray transmission sustaining film so as to maximize the ripple of transmittivity by the film thickness interference at the wavelength 633nm of He-Ne-laser beams while after the formation of said mask comprising a heavy metal pattern absorbing the X-rays, a light element film hardly absorbing the X-rays sustaining the heavy metal pattern as well as a frame fixing the peripheral part of the mask, the whole region or a part thereof of the X-ray transmission sustaining film is adjusted by etching process from the rear surface or the surface of the mask so as to maximize the transmittivity at the wavelength 633nm of the He-Ne-laser beam.</p> |
