发明名称 |
Enclosed ferroelectric stacked capacitor |
摘要 |
This invention relates to semiconductor circuit memory storage devices and more particularly to a process to develop three-dimensional stacked cell capacitors using a PZT ferroelectric material as a storage cell dielectric for use in high-density dynamic random access memory (DRAM) arrays. The present invention employs using PZT ferroelectric for the storage cell dielectric in three-dimensional stacked capacitor technology and develops an existing stacked capacitor fabrication process to construct a PZT three-dimensional stacked capacitor cell (the EFSC) that will allow denser storage cell fabrication with minimal increases of overall memory array dimensions. A capacitance gain of 3 to 10X or more over that of a conventional 3-dimensional storage cell is gained by using PZT ferroelectric as the storage cell dielectric.
|
申请公布号 |
US5081559(A) |
申请公布日期 |
1992.01.14 |
申请号 |
US19910662671 |
申请日期 |
1991.02.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FAZAN, PIERRE;LIU, YAUH-CHING;CHAN, HIANG C. |
分类号 |
H01L21/02;H01L27/115;H01L29/92 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|