发明名称 READ CONTROL CIRCUIT OF MULTI - OUTPUT MEMORY DEVICE
摘要 The circuit controls the read-out in a multiple-output memory device in order to remove noise in an output driving section. A first clock generator outputs first clocks having a certain pulse width upon receipt of ATD signals derived from address signals. A voltage discriminator discriminates the voltage level by comparing it with a reference voltage, and a second clock generator generates second clocks having a certain pulse width controlled by the output voltage of the voltage discriminator. First and second differential amplifiers generate amplified outputs on detecting the voltage differences between bit lines, and an output buffering and driving section outputs the outputs of the first and second differential amplifiers under the control of read/write control signals.
申请公布号 KR920000402(B1) 申请公布日期 1992.01.13
申请号 KR19890013683 申请日期 1989.09.22
申请人 AM SUNG ELECTRONICS CO., LTD. 发明人 IM, BYONG - YUN
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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