| 摘要 |
The steps of a process for producing an interconnection configuration made of tungsten are: forming a polysilicon layer (18) on a first insulating layer (12) on a semiconductor substrate (11) and doping impurities; forming a highly-doped oxide layer (19) on the polysilicon layer and then forming a metallic interconnection configuration; carrying out a selective growth of tungsten (15) on an exposed part of the polysilicon layer; stripping the highly-doped oxide layer by wet etching, simultaneously etching a tungsten residue (20) formed on the oxide layer; and dry etching the polysilicon by using the tungsten on the polysilicon as an etching mask, leaving only the polysilicon located beneath the tungsten. The process can solve the problems encountered in the use of tungsten for the interconnection and can increase the speed of semiconductors comprising this interconnection, while providing long-term reliability of the device. <IMAGE>
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