| 摘要 |
<p>PURPOSE:To eliminate diffusion of impurity of source and drain in a silicon substrate and to further simplify manufacturing steps by connecting at least one of the source and the drain of a MOS transistor in series with a resistor. CONSTITUTION:An n-channel memory transistor (MOS transistor) 101 is formed of a drain electrode 111, a source electrode 112, and a gate electrode 113. An address transistor (MOS transistor of a switching element) 102 to become a resistor 116 is connected in series with the electrode 111 of the transistor 101.</p> |
