| 摘要 |
<p>PURPOSE:To obtain a phase shifting mask easy in inspection and correction of defects and good in controllability by forming an opaque mask pattern on a transparent substrate and oxidizing the mask pattern to form the phase shifter uniform in thickness around the mask pattern. CONSTITUTION:A resist pattern 4 is formed on the material film to be formed into the mask pattern 2, and this film is etched by using the resist pattern 4 as a mask to form the mask pattern 2, and the resist pattern 4 is removed. Then, the pattern 2 is oxidized to form the phase shifter 3 on the whole surface of the circumference of the pattern 2, thus permitting inspection and correction of defects to be facilitated and the obtained phase shifting mask to be good in controllability by oxidizing the whole surface of the mask pattern after forming the perfect mask pattern.</p> |
