SEMICONDCTOR MEMORY DEVICE

摘要

PURPOSE:To cut off an unnecessary leak current so as to use the semiconductor memory device by connecting a switch element having ON resistance lower than that of high resistance elements between memory cells and a power supply. CONSTITUTION:The switch element Sw having ON resistance lower than that of the high resistance elements R1 to Rn of the memory cells M1 to Mn is inserted between a terminal K and a lower supply line Lv1. Thereby, n memory cells M1 to Mn can be separated from a power supply line Lvv1 at the time of evaluating a leak current and the leak current of a part other than the memory cells M1 to Mn of an E/R type SRAM can be evaluated. Consequently, an unnecessary leak current can be cut off at the time of using the device.