发明名称 PRODUCTION OF SILICON NITRIDE SINTERED BODY
摘要 PURPOSE:To enhance strength of a silicon nitride sintered body at a high temp. by mixing at least tow kinds selected from among Y2O3, Er2O3, Tm2O3, Yb2O3 and Lu2O3 as a sintering adjuvant with Si3N4 powder and molding the mixture and heat-treating the molded body in the specified conditions and thereafter covering this molded body with glass and performing high-temp. hydrostatic pressing and sintering the molded body. CONSTITUTION:At least two kinds selected form among Y2O3, Er2O3, Tm2O3, Yb2O3 and Lu2O3 are added at about 8-13 wt.% as a sintering adjuvant to Si3N4 powder. The mixture is ground by a wet process and thereafter dried to obtain mixed powder. This dry powder is pressure-molded and the molded body is heat-treated at 1750-1950 deg.C in a N2 atmosphere of 9.5 atm. Thereafter this molded body is encapsulated with a glass capsule and deaerated and then high- temp. hydrostatic pressing is performed at 1850-1950 deg.C at 500-2000 atm and the molded body is sintered. The glass capsule is removed after sintering and furthermore the molded body is heated in a N2 atmosphere and crystallizing treatment is performed. An Si3N4 sintered body is obtained which has a high denseness and is excellent in hgih-temp. strength.
申请公布号 JPH046160(A) 申请公布日期 1992.01.10
申请号 JP19900109128 申请日期 1990.04.25
申请人 NGK INSULATORS LTD 发明人 KOBAYASHI HIROMICHI;MATSUHIRO KEIJI
分类号 C04B35/584;C04B35/58;C04B35/593 主分类号 C04B35/584
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