发明名称 |
Integrated semiconductor circuit with wo voltage reception pads |
摘要 |
The circuit comprises a first reference potential generator (5) near the first pad (2), from which is supplied with a voltage by a connecting link (4). Several second reference potential generators (6a,b) are fed with the reference potential from the first reference generator over a second link (7). Group of logic circuits (10a-d) are provided for each second reference potential generator. Each logic circuit has a switching circuit for processing an input signal, using the second reference potential, supplied via a third link (8a,b), forming a logic threshold value. Each second reference potential generator is formed near the respective group of logic circuits for reducing the resistance of the third link.
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申请公布号 |
DE4112612(A1) |
申请公布日期 |
1992.01.09 |
申请号 |
DE19914112612 |
申请日期 |
1991.04.17 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
OHBAYASHI, SHIGEKI;OHBA, ATSUSHI;ANAMI, KENJI, ITAMI, HYOGO, JP |
分类号 |
G05F3/22;H03K19/086 |
主分类号 |
G05F3/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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