发明名称 Integrated semiconductor circuit with wo voltage reception pads
摘要 The circuit comprises a first reference potential generator (5) near the first pad (2), from which is supplied with a voltage by a connecting link (4). Several second reference potential generators (6a,b) are fed with the reference potential from the first reference generator over a second link (7). Group of logic circuits (10a-d) are provided for each second reference potential generator. Each logic circuit has a switching circuit for processing an input signal, using the second reference potential, supplied via a third link (8a,b), forming a logic threshold value. Each second reference potential generator is formed near the respective group of logic circuits for reducing the resistance of the third link.
申请公布号 DE4112612(A1) 申请公布日期 1992.01.09
申请号 DE19914112612 申请日期 1991.04.17
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 OHBAYASHI, SHIGEKI;OHBA, ATSUSHI;ANAMI, KENJI, ITAMI, HYOGO, JP
分类号 G05F3/22;H03K19/086 主分类号 G05F3/22
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