| 摘要 |
<p>A process for patterning, which comprises applying a resist material comprising a mixture of at least one polymer selected from the polymers represented by the following formulae I and II, <CHEM> <CHEM> wherein R1 represents an aryl or an aralkyl group, R2 represents hydrogen or an alkyl group, R3, R4, R5 and R6 independently represent hydrogen, a halogen atom, an alkyl, an aryl or an aralkyl group, with the proviso that at least one of R3, R4, R5 and R6 represents an aryl or aralkyl group, with a substance which generates an acid by exposure on a substrate to be treated, followed by exposure and heat treatment, and then developing the system in a downflow stream of oxygen-containing plasma.</p> |
