| 摘要 |
PURPOSE:To eliminate a connecting step, to facilitate a connecting work and to simplify an interconnector structure when many solar cells are interconnector- connected in series by forming p-, n-type electrodes on the rear surface of a substrate and forming the cell. CONSTITUTION:The wafer end of an n-type GaAs layer 12 on a semi-insulating GaAs substrate 11 is etched to form an n-type GaAs layer 12, steps exposed on the surface of a semi-insulating GaAs substrate 11. Then, a p-type GaAs layer 13, a surface recombination preventive p-type GaAs window layer 14 are grown, and a reflection preventive film 15 is further deposited thereon. Thereafter, a wafer end having no step is etched to expose layer 12, the wafer end having the step is etched at the lower part of the step to expose the layer 13. Eventually, an n-type electrode 21 is formed from the surface of the layer 12 to the rear surface of the substrate 11, and a p-type electrode 22 is formed from the surface of the layer 12 to the rear surface of the substrate 11 by plating method, etc., at the side of the wafer. |
