| 摘要 |
PURPOSE:To sufficiently obtain the thickness of an amorphous semiconductor layer in a radioactive-ray incident direction and to greatly improve radiation detecting sensitivity by providing an uneven part on the layer to provide sufficient thickness to the radioactive ray incident direction. CONSTITUTION:A lower electrode 11 made of molybdenum (Mo) is, for example, formed on a lower substrate 10 formed in a triangular shape. An amorphous semiconductor layer 12 having a thickness l1 is formed thereon. The layer 12 is formed to have a thickness l2 in a radioactive-ray incident direction shown by an arrow in the figure larger than the thickness l1. An upper electrode 13 made of the same material as that of the substrate 10 is formed on the layer 12. The electrodes 13, 11 are connected to a measuring circuit system 5.
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