| 摘要 |
PURPOSE:To form quantum wires a processing re-grown interface of which is not deteriorated, by continuously executing a process, in which a semiconductor layer is etched and the surface of the semiconductor layer after a mask is removed by a fluorine group gas is exposed to excited hydrogen, in a high vacuum, cleaning the surface and growing a crystal. CONSTITUTION:Samples, on which wire masks are formed, are set on substrate holders 17 and housed in a sample exchange chamber 1, and the sample exchange chamber 1, a mask removing chamber 2, an etching chamber 3, and an ultra-high vacuum surface treating chamber 4 are evacuated by evacuators 13, 14, 15, 16 such as a turbo-molecular-pump. The samples are etched in the etching chamber 3 through the mask removing chamber 2, the samples are moved into the mask removing chamber 2, and the masks are removed. The samples are shifted into the ultra-high vacuum surface treating chamber 4 through the etching chamber 3, a processing surface is irradiated with hydrogen gas by a radial beam gun 18, and fluorine group reaction products on semiconductor surfaces are reduced to the shape of HF, and removed. The samples are moved into a growth chamber 22, and quantum well wires are formed. |
