Thin film field effect transistor array for use in active matrix liquid crystal display.

摘要

A thin film field effect transistor array comprises a plurality of parallel gate bus lines formed on a transparent insulative substrate, and a plurality of parallel drain bus lines formed on the transparent insulative substrate so as to intersect the gate bus lines. A plurality of pixel electrodes are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines, and a plurality of thin film field effect transistors are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines. Each of the thin film field effect transistors is connected to a corresponding one of the pixel electrodes. A plurality of storage capacitors are each formed in proximity of and connected in parallel to a corresponding one of the pixel electrodes. Each of the storage capacitors is formed of a stacked structure having at least first, second and third level capacitor electrodes which are stacked in the named order and separated from each other by an intervening insulating layer. At least one of the first, second and third level capacitor electrodes is connected to a corresponding one of the gate bus lines. <IMAGE>