| 摘要 |
PURPOSE:To inspect the surface forms of semiconductor devices as well as to specify their constituents, by letting a focussed-ion beam device have an analyzing function. CONSTITUTION:A primary ion beam 2 generated by an ion source 1 passes a mirror cylinder 3, and reaches a semiconductor device 6 fixed on the sample stage 5 in a sample chamber 4 to scan the device in an area similar to the screen of a picture image display 10. As a result, secondary electrode 7 are emitted from the surface of the semiconductor device 6. These secondary electrons 7 are detected by a detector 8. The detector output is converted into a video signal by a signal processor 9, and it is displayed on the picture image display 10. A location on the screen is specified to determine the material of the corresponding area of the device. A primary electron beam 12 generated by an electrode gun 11 irradiates that area on the semiconductor device 6 fixed on the sample stage 5 in a sample chamber 4, and as the result characteristic X-rays 14 are emitted from the surface of the semiconductor device 6. These characteristic X-rays 14 are detected by a detector 15, and its output is converted by a signal processor 16 and is displayed on a picture image display 17. |
