发明名称 |
Photoelectric device made of hydrogenated amorphous silicon and method of manufacture. |
摘要 |
<p>The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the device. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by washing and drying process, to establish electrical contacts through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only prevents such electromigration of electrode metal, but it also allows a greater freedom for choosing a material for the collector electrode. <IMAGE></p> |
申请公布号 |
EP0465026(A2) |
申请公布日期 |
1992.01.08 |
申请号 |
EP19910305325 |
申请日期 |
1991.06.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KANBARA, TERUHISA;KONDO, SHIGEO |
分类号 |
H01L31/0224;H01L31/105;H01L31/20 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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