| 摘要 |
A field effect transistor (FET) has an In P substrate of semi-insulation material. A non-doped Ga In As layer is epitaxially grown on the In P substrate, and an n type Ga In As P layer is epitaxially grown on the Ga In As layer. An Al In As layer is formed directly, or through another In P layer, on the Ga In As P layer by epitaxial growth. A source electrode and a drain electrode are formed on the Al In As layer with ohmic contacts, and a gate electrode is formed on the Al In As layer with a Schottky contact. The arrangement enables an enhancement type FET, which is superior in relation to the ease of construction of the power supply, to be of the heterojunction type using two dimensional electron gas with the advantages inherent in this type of construction. |
