发明名称 |
C-MOS DEVICE AND A PROCESS FOR MANUFACTURING THE SAME |
摘要 |
Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity types are provided in at least two adjacent regions among a plurality of island substrate regions separated by the element separate regions. An impurity layer is provided in that portion between the substrate and at least one of the element regions.
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申请公布号 |
US5079183(A) |
申请公布日期 |
1992.01.07 |
申请号 |
US19890478044 |
申请日期 |
1989.01.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEDA, SATOSHI;IWAI, HIROSHI |
分类号 |
H01L21/74;H01L21/762;H01L21/8238;H01L27/092;H01L27/105 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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