| 摘要 |
A thin film forming device comprises a vacuum tank held at the predetermined degree of vacuum; a substrate placed in the vacuum tank; internal tanks disposed in the vacuum tank and each having an opening opposite to the substrate; gas jet nozzles arranged in the internal tank and connected with reactive gas sources outside the vacuum tank for jetting reactive gases of different types toward the substrate through the opening of the internal tank; and electron beam irradiation means disposed close to a passage, through which the reactive gases jetted from the gas jet nozzles pass, for irradiating electron beams to the reactive gases. |
