| 摘要 |
PURPOSE:To allow the accurate transfer of mask patterns without changing the size of mask patterns from a design side by forming ion implanted regions having the ion concn. corresponding to the size of apertures on a substrate surface corresponding to the size of apertures on a substrate surface corresponding to the apertures of the mask patterns. CONSTITUTION:A shielding film 2 patterned to prescribed patterns is formed on the transparent glass substrate 1 and the ion implanted regions 4, 41 of respectively different concns. are formed on the surface of the substrate 1 corresponding to the parts B and C of the shielding film 2. The difference in the intensity of transmitted light by the size of the apertures is, therefore, offset by the difference in the light transmittance by the ion concns. of the ion implanted regions, by which the intensity of the light emitted from the apertures of the mask patterns is uniformized. The accurate transfer of the mask patterns is executed in this way without varying the size of the mask patterns of the photomask from the design size. |
