发明名称 METHOD FOR PROCESSING SEMICONDUCTOR MATERIALS
摘要 A method for processing semiconductor material for annealing or circuitizing purposes, includes establishing a high intensity light which is controlled at a high repetition rate, and exposing it toward the surface of the semiconductor material to process it in an improved manner. The high speed light is directed transversely to the surface of the material to be processed, only to a shallow depth.
申请公布号 US5079187(A) 申请公布日期 1992.01.07
申请号 US19890347422 申请日期 1989.05.04
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 ASMUS, JOHN F.;LOVBERG, RALPH H.
分类号 B08B7/00;G03F7/20;H01J61/72;H01L21/00;H01L21/268;H05H1/04;H05H1/52 主分类号 B08B7/00
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