发明名称 Plasma-assisted processing magneton with magnetic field adjustment
摘要 A magnetron plasma processing module (20) with magnetic field adjustment for magnetron-plasma-enhanced processing of a semiconductor wafer includes a magnetron housing, a plurality of magnets (44), and magnetically conductive pins (26) for varying the magnetic field distribution and strength at the semiconductor wafer (52). Top plate (34) adjustably engages magnetically conductive pins (26). A magnetically nonconductive cylinder (36) supports top plate (34) and receives pins (26) from top plate (34). Magnet assembly (40) connects to cylinder (36) and contains magnets (44). Magnet assembly (40) also has bore (82) to receive pins (26). Magnetically conductive ring (38) separates cylinder (36) from magnet assembly (40) and engages pins (26) to isolate the magnetic field from cylinder (36). Magnets (44) and extension iron bars associate with magnet assembly (40) to establish the magnetic field having adjustable uniformity. Iron bars (42) associate with magnets (44) to aid in producing a uniform magnetic field at semiconductor (52). The magnetron module (20) can be rotated to achieve uniform magnetron plasma processing.
申请公布号 US5079481(A) 申请公布日期 1992.01.07
申请号 US19900561741 申请日期 1990.08.02
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MOSLEHI, MEHRDAD M.
分类号 H01J37/32 主分类号 H01J37/32
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