| 摘要 |
PURPOSE:To detect a marginal defect of a sense amplifier by bringing a potential for writing in a memory cell to an intermediate voltage in the test mode. CONSTITUTION:The semiconductor dynamic RAM is provided with a P-channel MOS transistor (TR) 1, N-channel MOS TRs 2 - 9, 13, static capacitors 10 - 12, inverters 21 - 28 and a NOR circuit 100. A signal TE is set to a high level in the test mode and to a low level in the normal mode. Then the circuit is used to write an intermediate voltage to the memory cell in the test mode by using the circuits. Thus, the semiconductor dynamic RAM able to detect a marginal defect of the sense amplifier is realized. |
