| 摘要 |
<p>PURPOSE:To prevent a lift-off piece from depositing by providing etching selectivity to the resist film and electrode films in other sections, removing only the electrode film on the resist film through etching, then, eliminating the resist film. CONSTITUTION:A resist film 5 is formed on a channel protective film 4 with a gate electrode G as a mask. Next, with this resist film 5 as a mask, the exposed part of the channel protective film 4 is removed. Then, an electrode film 6 is formed and this is subjected to anode oxidation to form on anode oxide film 7 on the surface of the electrode film 6. The anode oxide film 7 formed in this manner has a different etchant for etching from its parent metal of electrode films 6 and 6'. This is used to eliminate the electrode film 6' selectively through the dry etching process. Consequently, at the time of a process of eliminating the resist film 5, the electrode film 6' deposited on it has already been removed so that a lift-off piece will not deposit.</p> |
