发明名称 |
Film-forming material, group IV metal oxide film and vinylenediamide complex |
摘要 |
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material. |
申请公布号 |
US9371452(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201214342993 |
申请日期 |
2012.09.03 |
申请人 |
TOSOH CORPORATION;Sagami Chemical Research Institute |
发明人 |
Kinoshita Tomoyuki;Iwanaga Kohei;Asano Sachio;Kawabata Takahiro;Oshima Noriaki;Hirai Satori;Harada Yoshinori;Arai Kazuyoshi;Tada Ken-ichi |
分类号 |
C07F7/02;G21H5/00;C09D1/00;C01B33/113;C07F7/00;H01L21/02 |
主分类号 |
C07F7/02 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A film-forming material, obtained by a process comprising:
dissolving a compound comprising a titanium atom or a zirconium atom, with the titanium atom or the zirconium atom being bridged by a bridging oxygen atom, in an alcohol comprising two or more oxygen atoms, thereby obtaining a solution, and heating the solution. |
地址 |
Shunan-shi JP |