| 摘要 |
PURPOSE:To improve a manufacturing yield, by adding carbon having a predetermined concentration or more to a semiconductor substrate used for a semiconductor device. CONSTITUTION:In making ICs or LSIs, a growth process for an epitaxial Si layer, thermal oxidization process for the surface of the epitaxial Si layer, diffusion process and the like are performed by using an Si substrate having a carbon concentration of 0.8X10<17>cm<-3> or more. This method prevents the occurrence of dislocation which may accompany the thermal treatment and a manufacturing yield will be improved and stabilized by demarcating 0.8X10<17> as its boundary. |
