发明名称 Plasma treating method using hydrogen gas.
摘要 <p>A plasma treating method subjects an object surface (1) to a plasma treating within a chamber (8, 11b). First, first and second gasses are supplied into the chamber, where the first gas includes hydrogen molecules as a main component, the second gas includes a quantity of hydrogen less than that included in the first gas and is selected from a group of materials consisting of organic compounds and inorganic compounds, the organic compounds include hydrogen and oxygen and the inorganic compounds include hydrogen. Second, plasma of a mixed gas which is made up of the first and second gasses is generated within the chamber to subject the object surface to the plasma treating. Preferably, the second gas is water vapor. &lt;IMAGE&gt;</p>
申请公布号 EP0463870(A1) 申请公布日期 1992.01.02
申请号 EP19910305788 申请日期 1991.06.26
申请人 FUJITSU LIMITED 发明人 FUJIMURA, SHUZO;TAKEUCHI, TATSUYA;NAKANO, YOSHIMASA;MIYANAGA, TAKESHI;MATOBA, YUUJI
分类号 C23C16/02;G03F7/36;G03F7/40;H01L21/306;H01L21/311;H01L21/321 主分类号 C23C16/02
代理机构 代理人
主权项
地址