Bonding wire directly to contact face - after laser removal of contact face oxide and impurities

摘要

(A) In prodn. of a connection between a bond wire (20) and a metallic contact face (12), esp. for circuit board components (pref. discrete or integrated semiconductor devices), the novelty is that the contact face (12) is freed from oxide (13) and other impurities (13@) before bonding the wire (20). Pref. a laser (esp. an excimer laser) is used to remove the oxide and impurities. (B) Equipment for carrying out the process consists of a commercial bonding device combined with a laser (pref. excimer laser) system. (C) Also claimed is an electronic assembly (esp. a semiconductor component) produced by the process. Pref. the laser has a 180-350 (esp. 193) nm. wavelength and is pulse-operated pref. in the nanosec. range. The process is suitable for use in the bonding of aluminium bond wire directly to copper contact faces of unpackaged semiconductor devices. ADVANTAGE - The process allows direct bonding on a metallic contact face of non-precious metal (e.g. Cu or Ni), thus avoiding expensive special metallising e.g. with Au and Ni.