| 摘要 |
A semiconductor memory device comprises a plurality of main memory cell arrays (102 - 104), a redundant memory cell array (105), a plurality of word lines (DWL) provided in each of the main memory cell arrays and the redundant memory cell array, a plurality of bit lines (BL, BL), a plurality of common word lines (MWL) extending throughout the plurality of main memory cell arrays and the redundant memory cell array, a row decoder (19,24) for addressing a common word line in response to first address data, a plurality of word line switches (20 - 23) for selectively connecting the common word line to a corresponding word line, a column decoder (25, 111 - 114) supplied with second address data for addressing a bit line in a main memory cell, the column decoder having a controller (90a, 90b) for selectively disabling the addressing of bit line in response to incoming of a particular combination of the second address data to the column decoder, and a redundant column decoder (114, 90c - 90d) supplied with second address data for selectively addressing a bit line in response to incoming of particular combination of the second address data, wherein the word line switches (23) for the redundant memory call array are controlled such that the common word lines are connected to corresponding word lines of the redundant memory cell array irrespective of the first and second address data. |
