发明名称 |
Semiconductor device having metallic layers. |
摘要 |
A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong. <IMAGE> |
申请公布号 |
EP0463362(A2) |
申请公布日期 |
1992.01.02 |
申请号 |
EP19910108262 |
申请日期 |
1991.05.22 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
KONDO, ICHIHARU;INAGUMA, YOSHIAKI;SAKAMOTO, YOSHITSUGU |
分类号 |
C23C14/06;C23C14/14;H01L21/28;H01L21/285;H01L21/52;H01L23/482;H01L23/492;H01L29/43 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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