发明名称 |
A METHOD OF PRODUCING A SEMICONDUCTOR LASER |
摘要 |
<p>A method of producing a semiconductor laser is provided which comprises a first time crystal growth process for producing a crystal growth layer (1, 2 3) including at least a semiconductor layer (2) including aluminum on a substrate (1), a process for producing a stripe groove (10) by conducting a selective etching to the crystal growth layer to expose a portion of the semiconductor layer (2) including aluminum, and a second time crystal growth process for producing a semiconductor layer (4) including no aluminum on the entire wafer surface including the exposed surface of the semiconductor layer (2) and further producing a semiconductor layer (5) including aluminum on the semiconductor layer (4) including no aluminum. The production of a high resistance layer (9) having bad crystallinity at the second time crystal growth is thus prevented.</p> |
申请公布号 |
EP0270361(B1) |
申请公布日期 |
1992.01.02 |
申请号 |
EP19870310623 |
申请日期 |
1987.12.02 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAGAI, YUTAKA MITSUBISHI DENKI KABUSHIKI KAISHA;MIHASI, YUTAKA MITSUBISHI DENKI KABUSHIKI KAISHA;YAGI, TETSUYA MITSUBISHI DENKI KABUSHIKI KAISHA;OTA, YOICHIRO MITSUBISHI DENKI KABUSHIKI KAISHA |
分类号 |
H01S5/00;H01S5/223;H01S5/323 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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