发明名称 |
Semiconductor memory device containing a capacitor and method for manufacturing same. |
摘要 |
<p>A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film. The Al region can be grown selectively to produce freestanding mushroom-like structures without further pattering steps.</p> |
申请公布号 |
EP0463741(A2) |
申请公布日期 |
1992.01.02 |
申请号 |
EP19910304867 |
申请日期 |
1991.05.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
INOUE, SHUNSUKE;SAKASHITA, YUKIHIKO;NAKAMURA, YOSHIO;KIKUCHI, SHIN;YUZURIHARA, HIROSHI |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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