| 发明名称 | Method of producing an optoelectronic semiconductor chip | ||
| 摘要 | A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer. | ||
| 申请公布号 | US9397280(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201314383177 | 申请日期 | 2013.02.14 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Göötz Britta;Moosburger Jürgen;Plöβl Andreas;Sabathil Matthias |
| 分类号 | H01L33/64;H01L33/00;C23C24/04;C25D7/12;H01L33/46 | 主分类号 | H01L33/64 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A method of producing an optoelectronic semiconductor chip comprising: growing an optoelectronic semiconductor layer sequence on a growth substrate; forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method; and at least partly removing the growth substrate after forming the electrically insulating layer, wherein, before the process of forming the electrically insulating layer, a mirror layer is applied to the optoelectronic semiconductor layer sequence, and the electrically insulating layer is applied on that side of the mirror layer facing away from the semiconductor layer sequence. | ||
| 地址 | DE | ||