| 摘要 |
An apparatus for dry etching, which comprises a stage for supporting a substrate, a rotor having a center shaft, the stage and an arm connecting the stage to the center shaft, and a driving means for turning the rotor at the center shaft as a turning center in the direction tangential to the circumference of a circle established by turning of the surface of the substrate at the center shaft as a turning center, the rotor being housed in a chamber, can make uniform perpendicular submicron etching with radicals or a reactive gas without using ions and without damages on the substrate.
|
