PROCEDE, DISPOSITIF ET SYSTEME DE DETECTION AUTOMATIQUE DE DEFAUTS DANS DES VIAS TSV

摘要

The method involves measuring (100) a parameter derived from electrical characteristic of through-silicon-via (TSV), and detecting defects in the TSV according to a comparison of the measured parameter with a reference parameter. The reference parameter is calculated from the measured parameter by determining an expected value of the parameter to be measured on the TSV, where the parameter measured on each of the TSV includes an oscillation frequency value derived from a capacitive characteristic of the TSV. Independent claims are also included for the following: (1) a device for automatic detection of defects in TSV formed in a layer of semiconductor material (2) a system for automatic detection of defect in TSV.