| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode. | ||
| 申请公布号 | US9412825(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201414472956 | 申请日期 | 2014.08.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Yasumoto Takaaki;Yanase Naoko;Abe Kazuhide;Uchihara Takeshi;Saito Yasunobu;Naka Toshiyuki;Yoshioka Akira;Ono Tasuku;Ohno Tetsuya;Fujimoto Hidetoshi;Masuko Shingo;Furukawa Masaru;Yagi Yasunari;Yumoto Miki;Iida Atsuko;Murakami Yukako;Motai Takako |
| 分类号 | H01L29/66;H01L29/40;H01L29/423;H01L29/778;H01L29/20 | 主分类号 | H01L29/66 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device, comprising: a GaN-based semiconductor layer; a source electrode and a drain electrode spaced from each other on the GaN-based semiconductor layer in a first direction; a gate electrode between the source electrode and the drain electrode in the first direction; a first conductive layer contacting a surface of the GaN-based semiconductor layer between the gate electrode and the drain electrode in the first direction, wherein the first conductive layer is electrically connected to the drain electrode and is not electrically connected to the source electrode; and a first resistive element having a resistivity that is greater than a resistivity of the first conductive layer, the first resistive element being in an electrical path between the first conductive layer and the drain electrode. | ||
| 地址 | Tokyo JP | ||