Silicon carbide device and a method for manufacturing a silicon carbide device

摘要

A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

主权项

1. A method for manufacturing a silicon carbide device, the method comprising:
providing an epitaxial silicon carbide layer comprising a first conductivity type; manufacturing a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer comprising a second conductivity type, wherein the buried lateral silicon carbide edge termination region is manufactured, so that it is covered by a silicon carbide surface layer comprising the first conductivity type; and implanting ions of the first conductivity type into the silicon carbide surface layer, so that the silicon carbide surface layer comprises a higher doping concentration than the epitaxial silicon carbide layer.