| 摘要 |
PURPOSE:To remove air bubbles produced at the time of forming a glassivation film by removing in advance an insulating film part to become burrs in a mesa etching. CONSTITUTION:A hole having a size larger than the width (c) of a desired mesa groove to be formed by mesa etching is formed at an insulating film 2 coated on a semiconductor substrate 1 formed with a semiconductor region. Then, a photoresist layer 4 is so formed as to cover the residual part of the film 2 and the periphery of the exposed part of the substrate 1. Thereafter, with the layer 4 as a mask an etchant is used for the mesa etching. A mesa groove 5 having the width (c) smaller than the width of the hole of the film 2 and larger than the width specified by the layer 4 is formed by mesa etching. Eventually, the layer 4 is removed, and a glass film 6 is covered on the overall surface. |
