发明名称 |
Light emitting diode (LED) die having strap layer and method of fabrication |
摘要 |
A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the first-type semiconductor layer. |
申请公布号 |
US9419195(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201414341815 |
申请日期 |
2014.07.27 |
申请人 |
SemiLEDS Optoelectronics Co., LTD. |
发明人 |
Shih Yi-Feng Fu |
分类号 |
H01L29/06;H01L33/62;H01L33/06;H01L33/60;H01L33/38;H01L33/00 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
Gratton Stephen A. |
主权项 |
1. A light emitting diode (LED) die comprising:
an epitaxial stack comprising a p-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the p-type semiconductor layer configured to emit electromagnetic radiation, and an n-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer having a trench; a p-pad in electrical communication with the p-type semiconductor layer; an n-pad in electrical contact with the n-type semiconductor layer; a strap layer comprising a conductive material in the trench in electrical contact with the n-pad and with the n-type semiconductor layer, the strap layer configured to conduct current from the n-pad through the trench and across the n-type semiconductor layer in an area under the p-pad; and an electrical insulator layer on the strap layer configured to electrically insulate the conductive material from the p-pad. |
地址 |
Chu-Nan TW |