Light emitting diode having electrode pads

摘要

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

主权项

1. A light emitting diode, comprising:
a substrate; a first light emitting region and a second light emitting region disposed over the substrate; each light emitting region comprising; a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode pad electrically connected to the first conductivity type semiconductor layer; a second electrode pad formed over the second conductivity type semiconductor layer, wherein the second electrode pad is electrically insulated from the light emitting structure; a first extension extending from the first electrode pad towards the second electrode pad and disposed between the first and second light emitting regions to be electrically connected to a portion of the first conductivity type semiconductor layer exposed through the second conductivity type semiconductor layer; and an insulation layer disposed between the second electrode pad and the portion of the first conductivity type semiconductor layer which is exposed through the second conductivity type semiconductor layer; wherein the first and the second light emitting regions share the first conductivity-type semiconductor layer and the second electrode pad.