Semiconductor device and method of manufacturing the same

摘要

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a P-well and an N-well disposed in the semiconductor substrate, a source disposed in the N-well and a drain disposed in the P-well, a shallow trench isolation (STI) structure disposed in the P-well, a gate structure disposed on the semiconductor substrate, wherein a portion of the gate structure extends into the semiconductor substrate and is disposed in a location corresponding to the STI structure.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate; forming a shallow trench isolation (STI) structure in the semiconductor substrate, wherein the STI structure is disposed in a location corresponding to where a P-well is to be formed; performing ion implantation to form the P-well and an N-well in the semiconductor substrate, wherein the P-well is formed surrounding side and bottom portions of the STI structure; forming a recess in the STI structure; forming a gate structure on the semiconductor substrate, wherein a portion of the gate structure extends into the recess; and performing ion implantation to form a source in the N-well and a drain in the P-well.