Bipolar junction transistor formed on fin structures

摘要

A Bipolar Junction Transistor (BJT) includes an elongated collector line, an elongated emitter line parallel to the collector line, and an elongated base line parallel to the collector line and positioned between the collector line and the base line. The emitter line, the base line, and the collector line are formed over fin structures.

主权项

1. A Bipolar Junction Transistor (BJT) comprising:
an elongated collector line; an elongated emitter line parallel to the elongated collector line; and an elongated base line parallel to the elongated collector line and positioned between the elongated collector line and the elongated emitter line; wherein the elongated emitter line, the elongated base line, and the elongated collector line are formed over fin interconnect structures that run perpendicular to the elongated collector line, the fin interconnect structures formed over elongated fin structures that run parallel to the elongated collector line.