发明名称 |
WAFER HEATERS FOR USE IN SEMI-CONDUCTOR-PRODUCING APPARATUS, HEATING UNITS USING SUCH WAFER HEATERS, AND PRODUCTION OF HEATERS |
摘要 |
A wafer heater for use in a semiconductor producing apparatus includes a discoidal substrate (6) made of a dense ceramic, and a resistance heating element (7) buried in the substrate. The surface of the substrate upon which a wafer is to be placed for heating is flat. A hollow sheath (12) whose inner pressure is not substantially varied even when the pressure inside the chamber (2) is joined to the substrate (6), and a thermocouple (14) is inserted into said hollow sheath. <IMAGE> |
申请公布号 |
EP0447155(A3) |
申请公布日期 |
1991.12.27 |
申请号 |
EP19910302010 |
申请日期 |
1991.03.11 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
SOMA, TAKAO;USHIKOSHI, RYUSUKE, 206 NGK;NOBORI, KAZUHIRO |
分类号 |
H01L21/00;(IPC1-7):H01L23/34 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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