| 摘要 |
<p>A microwave device comprises a substrate and fine metal particles having diameters of 0.1 mu m or smaller and arranged in a regular pattern on the substrate. In the preferred embodiment of the present invention, the substrate is subjected to electron beam irradiation in a stripe pattern and then a metal or alloy is deposited onto the irradiated area, thereby forming a regular arrangement of fine metal particle deposits which has not been successfully achieved by any prior art technique. The thus obtained device has a greatly improved high-frequency characteristics.</p> |
