发明名称 |
METHOD OF PRODUCING A SEMICONDUCTOR LASER |
摘要 |
A method of producing a semiconductor laser comprises a process of producing at least a support layer (8) and a mask layer (9); a process of producing an overhung portion (11) of mask layer (9) by etching these layers and side-etching the support layer (8) at above the semiconductor substrate (1) at the neighborhood of the resonator end surface; and a process of growing a lower cladding layer (4,4a), an active layer (5,5a), and an upper cladding layer (6,6a) successively on the substrate (1) by an MOCVD method; whereby a doublehetero junction structure in which the thicknesses of the respective layers at the neighborhood of the light emission end surface are less than those at the inside and central portion of the chip is obtained. |
申请公布号 |
EP0306225(B1) |
申请公布日期 |
1991.12.27 |
申请号 |
EP19880307899 |
申请日期 |
1988.08.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAKAMI, AKIHIRO MITSUBISHI DENKI |
分类号 |
H01L21/306;H01S5/00;H01S5/10;H01S5/16 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|