发明名称 MEMORY DEVICE
摘要 <p>PURPOSE:To reduce a power consumption by providing a control means to interrupt a normal current path in a current sense type amplifier reading out storage data in a memory cell. CONSTITUTION:The current sense type amplifier 1 and a reference voltage generating circuit 2 are operated with making the timing for specifying the address of the memory cells Q101, Q102 as the starting time, and the normal currents in the current sense type amplifier 1 and reference voltage generating circuit 2 are interrupted after the read-out of storage data in the memory cells Q101, Q102 is completed by the current sense type amplifier 1. Thus, the power consumption can be reduced without sacrificing the high speed read-out performance for the storage data.</p>
申请公布号 JPH03296996(A) 申请公布日期 1991.12.27
申请号 JP19900097916 申请日期 1990.04.14
申请人 NEC CORP 发明人 HIKICHI HIROSHI
分类号 G11C17/00;G11C5/14;G11C7/22;G11C16/06;G11C17/12 主分类号 G11C17/00
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