| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can stably perform attachment and detachment of a protective film to/from a portion where a plating layer is not formed to prevent abnormal deposition of the plating layer.SOLUTION: A semiconductor device manufacturing method comprises the steps of: rotating a semiconductor wafer 30 first in a state where a second film 22 is pressed to a lateral face of the semiconductor wafer 30 by a pressure roller 41 when covering the lateral face of the semiconductor wafer 30 with the second film 22; attaching ends in a shorter direction of the second film 22 in a state of being curved by the pressure roller 41 to both principal surfaces of the semiconductor wafer 30 by tucking rollers 42, respectively; subsequently, rotating the semiconductor wafer 30 one revolution and pulling the pressure roller 41 away from the semiconductor wafer 30 at the time when an end in a longer direction of the second film 22 overlaps a starting end 22c in the longer direction of the second film 22 to leave ends in the longer direction of the second film 22 as a bump part; and subsequently, holding the bump part and rotating the semiconductor wafer 30 backward after a plating treatment to detach the second film 22.SELECTED DRAWING: Figure 11 |
