发明名称 DRIVE CIRCUIT FOR POWER MOS FIELD-EFFECT TRANSISTOR
摘要 PURPOSE:To prevent a malfunction due to a noise at the time of the operation of a power MOSFET, and in addition, to improve switching speed by using a drive circuit provided with three inverter circuits. CONSTITUTION:A first and a second inverter circuits constituted of the MOSFETs 2 to 5 and a third inverter circuit 6 are provided, And a capacitance component 8 and a resistance component 9 are connected between the output terminal 7 of the first inverter circuit and the earth. Thus, since three inverter circuits 2 to 6 are provided for driving the power MOSFET 1, a hysteresis characteristic can be given to threshold voltage for operating and stopping the power MOSFET 1, and the malfunction due to the noise at the time of the operation of the power MOSFET 1 is prevented, and besides, its stopping operation is speeded up.
申请公布号 JPH03295312(A) 申请公布日期 1991.12.26
申请号 JP19900097186 申请日期 1990.04.12
申请人 MATSUSHITA ELECTRON CORP 发明人 YAMANISHI YUJI;TANIDA HIROSHI
分类号 H01L21/8234;H01L27/088;H01L29/78;H02M3/155;H02P8/00;H02P8/14;H03K17/30;H03K17/687 主分类号 H01L21/8234
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