METHOD FOR CRYSTALLIZING GROUP IV SEMICONDUCTOR, AND FILM FORMING APPARATUS

摘要

The present invention is to provide a method for crystallizing a group IV semiconductor, which is capable of suppressing poly-crystallization of a group IV semiconductor and obtaining group IV semiconductor crystals closer to single crystals. The method for crystallizing a group IV semiconductor comprises the following processes of: forming an additive-containing group IV semiconductor film on a process surface of a workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than 1(S1); liquefying the additive-containing group IV semiconductor film (S2); and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form group IV semiconductor crystals (S3).